Transphorm, a global leader in GaN (gallium nitride) power semiconductors, recently released the industry’s first 1200V sapphire-based GaN device simulation model and preliminary datasheet. The TP120H070WS FET is currently the only 1200V sapphire-based GaN power semiconductor available. This release demonstrates Transphorm’s capability to support future automotive power systems and a wide range of industrial, data communication, and renewable energy market applications, particularly three-phase power systems.
This 1200V GaN device has shown superior performance in a 5 kW 900 V buck converter operating at a 100 kHz switching frequency, achieving an efficiency of 98.7%, which surpasses similarly rated SiC MOSFETs. The 1200V GaN device offers higher power density and reliability while being more cost-effective than alternative technologies.
Transphorm’s innovative technology combines vertical integration, epitaxial ownership, and patented processes with decades of engineering expertise. This allows the company to launch GaN devices with high manufacturability, drivability, designability, and reliability. The sapphire-based GaN process has already achieved mass production in the LED market, and the 1200V technology builds on this mature technology.
Key specifications of the TP120H070WS device include:
- 70 mΩ RDS(on)
- Normally off
- Efficient bidirectional current
- ± 20 Vmax gate robustness
- Low 4Vth gate drive noise immunity
- Zero QRR
- 3-pin TO-247 package
Samples of the 1200V FET are expected to be available in the first quarter of 2024.
In automotive power systems and charging ecosystems, 1200V GaN devices offer significant advantages for electric vehicles, especially for larger vehicles with 800V batteries. 1200V power conversion switches will be used in next-generation onboard chargers, DC-DC converters, drive inverters, and pole charging systems. For current electric vehicle models using 400V batteries, Transphorm provides the 650V normally-off SuperGaN FET, which meets AEC-Q101 standards, operates at temperatures up to 175°C, and is in mass production.
Transphorm’s CTO and co-founder, Umesh Mishra, stated, “We are a leading power semiconductor company demonstrating and fulfilling the promise of GaN. Our 1200V technology showcases the innovative vision and determination of our engineering team, proving that GaN can easily play a role in previously designated silicon carbide application markets, opening up extensive market adoption potential for our business and the entire GaN industry.”
